Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
نویسندگان
چکیده
منابع مشابه
Magnetoexcitons in large area CVD-grown monolayer MoS2 and MoSe2 on sapphire
A. A. Mitioglu,1,2 K. Galkowski,1 A. Surrente,1 L. Klopotowski,3 D. Dumcenco,4 A. Kis,4 D. K. Maude,1 and P. Plochocka1,* 1Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France 2Institute of Applied Physics, Academiei Strasse 5, Chisinau, MD-2028, Republic of Moldova 3Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Wa...
متن کاملDeep ultraviolet photodetectors grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates
Optically-based chemical and biological sensors require optoelectronic devices with specific emission and detection wavelength ranges. Semiconductor optoelectronic devices applicable to this sensing are of particular interest due to their low power consumption, compact size, long lifetime, and low cost. We report the electrical and optical properties of deep UV p-i-n photodiodes (PDs) based on ...
متن کاملMonolayer MoSe2 grown by chemical vapor deposition for fast photodetection.
Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition ...
متن کاملHigh-efficiency InGaN-based LEDs grown on patterned sapphire substrates.
GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM. It is found that dislocations density decreases as the growth rates decrease. And the performance of In...
متن کاملRefractive index study of AlxGa1ÀxN films grown on sapphire substrates
A prism coupling method was used to measure the ordinary (no) and extraordinary (ne) refractive indices of AlxGa12xN films, grown by hydride vapor phase epitaxy ~HVPE! and metalorganic chemical vapor deposition ~MOCVD! on sapphire, at several discrete wavelengths from 442 nm to 1064 nm. In addition, spectroscopic transmittance and reflectance, correlated with the prism coupling results, were us...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2017
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4973519